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Proceedings Paper

Practical approach for AAPSM image imbalance correction for sub-100-nm lithography
Author(s): Hung Lin Cho; Shu Yi Lin; Frank Hsieh; Armen Kroyan; Hua-Yu Liu; Jason H. Huang; Shu-Hao Hsu; I-Hsiung Huang; Benjamin Szu-Min Lin; Kuei-Chun Hung
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Paper Abstract

In our previously published work, we investigated alternating-aperture PSM image intensity imbalance as function of various mask and optical parameters using rigorous electro-magnetic field (EMF) simulations. Results suggested that the imbalance could be effectively compensated through application of an optimized combination of undercut and a constant phase-shifter bias. In the effort of development and implementation of a production-ready image imbalance correction methodology, it is important to validate the accuracy of simulation-based predictions through correlation of results to experimental data. For this purpose, a test reticle containing various mask parameters as variables was designed and manufactured. The experimental data was obtained from SEM measurements of the exposed wafers, and results were compared to rigorous EMF simulation data. Based on results obtained, we propose and validate an image imbalance correction methodology to be implemented within the framework of the PSM - OPC manufacturing flow.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504393
Show Author Affiliations
Hung Lin Cho, Toppan Chungwha Electronics Co. (Taiwan)
Shu Yi Lin, Toppan Chungwha Electronics Co. (Taiwan)
Frank Hsieh, Toppan Chunghwa Electronics Co. (Taiwan)
Armen Kroyan, Synopsys, Inc. (United States)
Hua-Yu Liu, Synopsys, Inc. (United States)
Jason H. Huang, Synopsys, Inc. (United States)
Shu-Hao Hsu, UMC (Taiwan)
I-Hsiung Huang, UMC (Taiwan)
Benjamin Szu-Min Lin, UMC (Taiwan)
Kuei-Chun Hung, UMC (Taiwan)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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