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Proceedings Paper

Controlling defocus impact on OPC performance
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Paper Abstract

Variations in manufacturing process introduce uncertainties in model based optical proximity correction. Discrepancies may arise between the model description and the actual manufacturing condition. Optimal mask correction should minimize the sensitivity of line width variation as the lithography process variables change within the accepted range. In this paper, the effect of defocus on OPC mask and wafer patterning is investigated using a physical pattern transfer simulator, LithoScope. We evaluate the impact of defocus on a set of test patterns and on real circuit layout. We propose to control defocus effect by design centering and physical model-based verification.

Paper Details

Date Published: 28 August 2003
PDF: 8 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504380
Show Author Affiliations
Shinichi Takase, NTT Advanced Technology Corp. (Japan)
Qi-De Qian, IC Scope Research (United States)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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