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Proceedings Paper

Control of side-lobe intensity for attenuated phase-shifting mask in 157-nm lithography
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Paper Abstract

The TaSiOx attenuated phase-shifting mask (Att-PSM) has strong potential for durability against laser irradiation and good lithographic performance in 157 nm lithography. However, the resist resolution limit and depth of focus (DOF) are deteriorated by side-lobe patterns generated near the contact hole. This is because the side-lobe intensity generated near the light-transmitting region becomes larger in sub 100 nm contact holes. To minimize the effect of side-lobes and improve lithographic performance, we evaluated an Att-PSM with a chrome light-shielding layer and optimized the transmittance of its attenuated phase-shifting film. In an optical simulation, we investigated the effect of the side-lobe intensity on the resist region (i.e., a reduction in resist thickness). The light-shielding film was placed on the attenuated phase-shifting film to prevent the side-lobe pattern, and its effect on the imaginary resist pattern was simulated. We found that the distance between the patterning edge of the hole and that of the light-shielding region must be greater than 90 nm to fabricate a 100 nm isolated hole without side-lobe patterns. The side-lobe intensity could be controlled using the chrome-shielding-type Att-PSM, and the lithographic performance (such as resolution limit and DOF) was enhanced.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504283
Show Author Affiliations
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Eiji Kurose, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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