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Proceedings Paper

Transparent corner enhancement scheme for a DUV pattern generator
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Paper Abstract

Mask cost is a key challenge for the semiconductor industry and a major issue is the write times of e-beam pattern generators. DUV pattern generators can provide high throughput, but there is a cost and time involved in qualifying these tools for IC production. To minimize this time and cost, the masks from the DUV tool should have pattern fidelity similar to that of e-beam tools. This can be done with corner enhancements on an imaging DUV mask writer. Here, we describe such a corner enhancement scheme and present results for the 65-nm-node requirements. We demonstrate how the corner radius can be tuned in a range of radii with a negligible effect on the process latitude.

Paper Details

Date Published: 28 August 2003
PDF: 12 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504276
Show Author Affiliations
Hans Martinsson, Micronic Laser Systems AB (Sweden)
Jonas Hellgren, Micronic Laser Systems AB (Sweden)
Niklas Eriksson, Micronic Laser Systems AB (Sweden)
Mans Bjuggren, Micronic Laser Systems AB (Sweden)
Tor Sandstrom, Micronic Laser Systems AB (Sweden)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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