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Proceedings Paper

Semi-aqueous solvent applications for 193-nm EAPSM resist strip
Author(s): Julio R. Reyes; Curt Jackson; Laurent Dieu; William Bowers; Russell Stevens
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Paper Abstract

Photomask resist strip processes have traditionally used the sulfuric-peroxide-mix, known as SPM, or Piranha. This paper details a recent investigation into the utilization of solvent-based resist strip solutions applied to photomask resist stripping. Studies of two commercially available solvents are documented in this report: one formulated for positive resist stripping [Chem A, which contains a primary amine, glycol and is semi-aqueous], and another rated for 'hard-to-remove' positive resist stripping [Chem B, which contains glycol ethers, organic cyclics -- all proprietary]. Resist types, such as IP3600, and most Chemically Amplified Resists (CAR) will strip easily with any of the chemicals mentioned, however, other adverse effects may deter one from using them. The screening process employed in this study monitors effects of processing on EAPSM phase and transmission, AR layer reflectivity changes and surface ionic analytical comparisons. Chem A and B will show similarly low phase and transmission shifts at higher temperature and longer process times, while reflectivity data shows lower level changes associated with the use of Chem A (favorable). As for surface ionic contamination: on F and Cl contaminated surfaces, Chem A shows favorable results. Overall Chem A seems to be the appropriate choice for more thorough investigation in a production mask-making environment.

Paper Details

Date Published: 28 August 2003
PDF: 6 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504265
Show Author Affiliations
Julio R. Reyes, DuPont Photomasks, Inc. (United States)
Curt Jackson, DuPont Photomasks, Inc. (United States)
Laurent Dieu, DuPont Photomasks, Inc. (United States)
William Bowers, ATMI (United States)
Russell Stevens, ATMI (United States)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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