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Proceedings Paper

Complementary splitting with stress emulation for stencil masks
Author(s): Kohichi Nakayama; Kazuharu Inoue; Isao Ashida; Shinji Omori; Hidetoshi Ohnuma
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Paper Abstract

The practical methods for splitting line-and-space (LS) patterns and large rectangles into two complementary portions have been developed for the fabrication of stencil masks. The critical length for LS patterns can be determined from the finite-element modeling of the patterns under the external force acting up them in the wet cleaning of the mask. The optimal way of placing the split portions over the mask has also been demonstrated. On the other hand, a large pattern should be split in a step larger than half the shorter side of the figure. Since the methods are based on the simple and fast modeling, the flexible criteria as a function of design rule can be set in the splitting algorithm.

Paper Details

Date Published: 28 August 2003
PDF: 11 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504071
Show Author Affiliations
Kohichi Nakayama, Sony Corp. (Japan)
Kazuharu Inoue, Sony Corp. (Japan)
Isao Ashida, Sony Corp. (Japan)
Shinji Omori, Sony Corp. (Japan)
Hidetoshi Ohnuma, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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