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Proceedings Paper

Difference in dependence of 1/f and RTS noise on current in quantum-dot light-emitting diodes
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Paper Abstract

Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise of quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.

Paper Details

Date Published: 12 May 2003
PDF: 11 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.503166
Show Author Affiliations
Lode J.K. Vandamme, Eindhoven Univ. of Technology (Netherlands)
Alexander V. Belyakov, Nizhni Novgorod State Univ. (Russia)
Mikhail Yu. Perov, Nizhni Novgorod State Univ. (Russia)
Arkady V. Yakimov, Nizhni Novgorod State Univ. (Russia)

Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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