The nature of GaSb dissolution in the mixtures of HNO₃-HCl-CH₃COOH system in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching and polishing of GaSb, Sb and Ga were determined and surfaces of equal etching rates (Gibbs diagrams) were built. The potentials of self-dissolutions of indicated materials in the investigated solutions were studied also. Region of polishing solutions was defined and etchant compositions for chemical dynamic polishing of GaSb were optimized.

Date Published: 14 April 2003
PDF: 5 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502294

Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)