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Proceedings Paper

Spatially nanostructured silicon for optical applications
Author(s): Dmitri I. Kovalev; Joachim Diener; Nicolai Kuenzner; Egon Gross; Gennadi Polisski; Frederick Koch; Viktor Yu. Timoshenko; Minoru Fujii
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Paper Abstract

We report on a strong intrinsic optical anisotropy of silicon induced by its dielectric nanopatterning. As a result, an in-plane birefringence for nanostructured (110) Si surfaces is found to be 105 times stronger than that observed in bulk silicon crystals. A difference in the main values of the anisotropic refractive index exceeds that one of any natural birefringent crystals. The anisotropy parameters are found to be strongly dependent on the typical size of the silicon nanowires assembling the layers. The value of birefringence is dependent also on the dielectric surrounding of silicon nanoparticles assembling these layers. We show that stacks of layers having alternative refractive indices act as a distributed Bragg reflectors or optical microcavities. Dichroic reflection/transmission behavior of these structures sensitive to the polarization of the incident linearly polarized light is demonstrated. These findings open the possibility of an application of optical devices based on birefringent silicon layers in a wide spectral range.

Paper Details

Date Published: 14 April 2003
PDF: 11 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502162
Show Author Affiliations
Dmitri I. Kovalev, Technische Univ. Muenchen (Germany)
Joachim Diener, Technische Univ. Muenchen (Germany)
Nicolai Kuenzner, Technische Univ. Muenchen (Germany)
Egon Gross, Technische Univ. Muenchen (Germany)
Gennadi Polisski, Technische Univ. Muenchen (Germany)
Frederick Koch, Technische Univ. Muenchen (Germany)
Viktor Yu. Timoshenko, M.V. Lomonosov Moscow State Univ. (Russia)
Minoru Fujii, Kobe Univ. (Japan)

Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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