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Proceedings Paper

Pressure tuning of high-power laser diodes
Author(s): Pawel Adamiec; Filip Dybala; Artem Bercha; Roland Bohdan; Witold Trzeciakowski; Marek Osinski
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Paper Abstract

Wide-range wavelength tunability is demonstrated for commercial high-power laser diodes emitting at 980 nm, 830 nm, and at 808 nm. High pressure shifts the emission wavelength of the lasers due to the increase of bandgaps in the active layers with the rate of about 10 meV per kbar. For the 980 nm InGaAs/GaAs laser the threshold currents and the differential efficiencies remain constant with pressure which allows for the constant operating current and the emitted power in the full tuning range. For 830 nm and 808 nm GaAs/AlGaAs lasers there is an increase of threshold currents with pressure related to the leakage through X minima in the conduction band of AlGaAs. This limits the tuning range unless we operate the laser at lower temperature. We designed the pressure cell with Peltier cooling allowing for independent control of temperature down to 0 Celsius and pressure up to 20 kbar. The laser beam passes through the sapphire window or through the multi-mode fiber. Our device allows for the tuning of 980 nm laser down to 840 nm, 830 nm laser down to 745 nm, and 808 nm laser down to 720 nm. We were able to keep the output power fixed in the full tuning range: 300 mW for the 980 nm laser and 400 mW for the 830 nm and 808 nm lasers.

Paper Details

Date Published: 19 June 2003
PDF: 8 pages
Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); doi: 10.1117/12.501964
Show Author Affiliations
Pawel Adamiec, High Pressure Research Ctr. (Poland)
Warsaw Univ. of Technology (Poland)
Filip Dybala, High Pressure Research Ctr. (Poland)
Warsaw Univ. of Technology (Poland)
Artem Bercha, High Pressure Research Ctr. (Poland)
Uzhgorod National Univ. (Ukraine)
Roland Bohdan, High Pressure Research Ctr. (Poland)
Witold Trzeciakowski, High Pressure Research Ctr. (Poland)
Marek Osinski, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 4973:
High-Power Diode Laser Technology and Applications
Mark S. Zediker, Editor(s)

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