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Proceedings Paper

Radiation thermometer configured for GaAs molecular beam epitaxy
Author(s): S. E. Aleksandrov; Gennadii A. Gavrilov; A. A. Kapralov; Galina Yu. Sotnikova; Dmitri F. Chernykh; Andrey N. Alexeev; A. P. Shkurko
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Paper Abstract

The optical pyrometer configured for precision temperature control of GaAs wafer surface during the MBE growth is presented. The calibration technique for absolute surface temperature measurements based on RHEED observation directly before and during epitaxial growth, allows to minimize an for absolute temperature determination and practically invalidates the influence of pyrometers window coating by growth materials.

Paper Details

Date Published: 19 June 2003
PDF: 6 pages
Proc. SPIE 5066, Lasers for Measurements and Information Transfer 2002, (19 June 2003); doi: 10.1117/12.501551
Show Author Affiliations
S. E. Aleksandrov, A.F. Ioffe Physico-Technical Institute (Russia)
Gennadii A. Gavrilov, A.F. Ioffe Physico-Technical Institute (Russia)
A. A. Kapralov, A.F. Ioffe Physico-Technical Institute (Russia)
Galina Yu. Sotnikova, A.F. Ioffe Physico-Technical Institute (Russia)
Dmitri F. Chernykh, A.F. Ioffe Physico-Technical Institute (Russia)
Andrey N. Alexeev, JSC ATC-Semiconductor Devices (Russia)
A. P. Shkurko, JSC ATC-Semiconductor Devices (Russia)

Published in SPIE Proceedings Vol. 5066:
Lasers for Measurements and Information Transfer 2002
Vadim E. Privalov, Editor(s)

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