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Proceedings Paper

300-W XeCl excimer laser annealing and sequential lateral solidification in low-temperature polysilicon technology
Author(s): Burkhard Fechner; Mark Schiwek; Hans-Jurgen Kahlert; Naoyuki Kobayashi
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Paper Abstract

The latest development in industrial fabrication of low temperature poly silicon by high power excimer laser annealing is presented in respect of two different aspects. To begin with, the precondition for todays generation 4 LTPS TFT LCD plants was fulfilled by recently improving the line beam annealing method by introduction of a 300W Lambda Physik excimer together with up to 370mm MicroLas line beam optics, integrated in an complete Japan Steel Works excimer laser annealing system for higher throughputs in substrate recrystallization. Secondly, an outlook on a new substrate illumination method is given, the so called sequential lateral solidification (SLS), which has already been developed to a level enabling industrial exploitation. The SLS method is not only very promising, because it can decrease substrate recrystallization time by a factor of 10 in comparison to the currently used line beam method, it also improves the performance of the poly-Si film by approximately a factor of two in terms of increasing the field effect mobility of free charge carriers to up to 300cm2/Vs. This will possibly allow production of CMOS devices on the panel, which is so far not possible in case of the LineBeam method.

Paper Details

Date Published: 19 February 2003
PDF: 4 pages
Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.499696
Show Author Affiliations
Burkhard Fechner, Lambda Physik Japan Co., Ltd. (Japan)
Mark Schiwek, Lambda Physik AG (Germany)
Hans-Jurgen Kahlert, MicroLas Lasersystem GmbH (Germany)
Naoyuki Kobayashi, Japan Steel Works, Ltd. (Japan)

Published in SPIE Proceedings Vol. 4830:
Third International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Kojiro F. Kobayashi; Koji Sugioka; Reinhart Poprawe; Henry Helvajian, Editor(s)

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