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Proceedings Paper

Characterization of front- to backwafer alignment and bulk micromachining using electrical overlay test structures
Author(s): Henk W. van Zeijl; John Slabbekoorn
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Paper Abstract

MEMS device fabrication can benefit from accurate front- to backwafer alignment (FTBA) using Wafersteppers. To characterize FTBA an electrical overlay test structure is designed and fabricated to measure front- to backwafer overlay in a bulk micromachining process. Only two lithographic steps are required to fabricate these devices. The conductive film on the frontwafer, TiN, is virtually insensitive for mechanical damage during backwafer processing, and features a low etch rate in anisotropic KOH etching (2.4 nm/hr). Both FTBA overlay and FTBA CD variations are measured. The measurements shows that the front to backwafer overlay accuracy in bulk micro machining are limited by non-lithographic process errors.

Paper Details

Date Published: 24 April 2003
PDF: 10 pages
Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); doi: 10.1117/12.499104
Show Author Affiliations
Henk W. van Zeijl, Technische Univ. Delft (Netherlands)
John Slabbekoorn, Technische Univ. Delft (Netherlands)

Published in SPIE Proceedings Vol. 5116:
Smart Sensors, Actuators, and MEMS
Jung-Chih Chiao; Vijay K. Varadan; Carles Cané, Editor(s)

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