Share Email Print

Proceedings Paper

Chemical etching effects in porous silicon layers
Author(s): Daniel Navarro-Urrios; Cecilia Perez-Padron; Eduardo Lorenzo; Néstor E. Capuj; Zeno Gaburro; Claudio J. Oton; Lorenzo Pavesi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We have studied the properties of p+-type doped porous silicon, formed by electrochemical etching, when is left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we monitored the formation of the porous silicon layer during the electrochemical treatment as well as the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of the photoluminescence modification for different post-etching times.

Paper Details

Date Published: 29 April 2003
PDF: 8 pages
Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.499073
Show Author Affiliations
Daniel Navarro-Urrios, Univ. de La Laguna (Spain)
Univ. degli Studi di Trento (Italy)
INFM (Italy)
Cecilia Perez-Padron, Univ. de La Laguna (Spain)
Eduardo Lorenzo, Univ. de La Laguna (Spain)
Néstor E. Capuj, Univ. de La Laguna (Spain)
Zeno Gaburro, Univ. degli Studi di Trento (Italy)
INFM (Italy)
Claudio J. Oton, Univ. degli Studi di Trento (Italy)
INFM (Italy)
Lorenzo Pavesi, Univ. degli Studi di Trento (Italy)
INFM (Italy)

Published in SPIE Proceedings Vol. 5118:
Robert Vajtai; Xavier Aymerich; Laszlo B. Kish; Angel Rubio, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?