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Proceedings Paper

Bias-controlled NIR/LWIR QWIP-based structure for night vision and see spot
Author(s): Noam Cohen; Gabby Sarusi; G. Mizrachi; A. Shappir; A. Sa'ar
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Paper Abstract

A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.

Paper Details

Date Published: 10 October 2003
PDF: 7 pages
Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.498641
Show Author Affiliations
Noam Cohen, ElOp Electro-Optics Industries Ltd. (Israel)
Gabby Sarusi, ElOp Electro-Optics Industries Ltd. (Israel)
G. Mizrachi, Hebrew Univ. of Jerusalem (United States)
A. Shappir, Hebrew Univ. of Jerusalem (Israel)
A. Sa'ar, Hebrew Univ. of Jerusalem (Israel)

Published in SPIE Proceedings Vol. 5074:
Infrared Technology and Applications XXIX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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