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Proceedings Paper

Generation of non-Gaussian fundamental modes in low-power end-pumped Nd:YVO4 microchip laser
Author(s): Gilles Martel; C. Labbe; Francois Sanchez; M. Fromager; Kamel Ait-Ameur
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Paper Abstract

Far-Field non-gaussian fundamental transverse modes have been obtained in CW end-pumped Nd:YVO4 microchip laser for particular cavity lengths. Such profiles appear at threshold and are not distorted when pump power increases but they strongly depend on the pump to mode size ratio. An implemented theoretical model qualitatively reproduces these transverse profiles. It is based on the hypothesis of diffraction effects of the resonant intra-cavity field on a Gaussian gain profile. Dependence of the pump to mode size ratio on such profiles will be also theoretically explained.

Paper Details

Date Published: 8 July 2003
PDF: 7 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498373
Show Author Affiliations
Gilles Martel, Univ. de Rouen/CORIA Groupe d'Optique et d'Optronique (France)
C. Labbe, Univ. de Rouen/CORIA Groupe d'Optique et d'Optronique (France)
Francois Sanchez, Univ. d'Angers/Lab. POMA (France)
M. Fromager, CIRIL-ISMRA (France)
Kamel Ait-Ameur, CIRIL-ISMRA (France)

Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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