Share Email Print

Proceedings Paper

Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio
Author(s): Shiang Feng Tang; Shih Yen Lin; S. T. Yang; ChengDer Chiang; Ya-Tung Cherng; H. T. Shen; T. E. Nee; Ray Ming Lin; Min Yu Hsu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We present results concerning the influence of organometrallic vapro phase epitaxy (OMVPE) grwoth paramters under ultra low V/III ratio on the surface morphology and temperature-dependent photoluminescence. Due to Indium segregation inteh 2D InAs wetting layers and accumulation from multi-atomic step edge on (001) 2° off toward (111) n-type GaAs substrate, self-assembled InAs quatnum dot formation takes pace aroudn or above 2D InAs islands while ~ one monolayer of InAs is regularly grown on GaAs substrate. It is attributed that the desorbed Indium Recaptured and nucleated effect on edge along (110)-orientation of GaAs substrate.

Paper Details

Date Published: 29 April 2003
PDF: 8 pages
Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.498276
Show Author Affiliations
Shiang Feng Tang, Chung Shan Institute of Science and Technology (Taiwan)
Shih Yen Lin, Land Mark Optoelectronics Corp. (Taiwan)
S. T. Yang, Chung Shan Institute of Science and Technology (Taiwan)
ChengDer Chiang, Chung Shan Institute of Science and Technology (Taiwan)
Ya-Tung Cherng, Chung Shan Institute of Science and Technology (Taiwan)
H. T. Shen, Chang Gung Univ. (Taiwan)
T. E. Nee, Chang Gung Univ. (Taiwan)
Ray Ming Lin, Chang Gung Univ. (Taiwan)
Min Yu Hsu, Chung Shan Institue of Science and Technology (Taiwan)

Published in SPIE Proceedings Vol. 5118:
Robert Vajtai; Xavier Aymerich; Laszlo B. Kish; Angel Rubio, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?