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Proceedings Paper

AIN mirror coating for high-power (AlGa)As laser diodes
Author(s): A. Jagoda; Lech Dobrzanski; Andrzej Malag; B. Stanczyk; Sylwia Wrobel; A. E. Kowalczyk
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Paper Abstract

A method of high power (AlGa)As laser mirrors passivation with thin AIN layers deposited by low temperature reactive sputtering is presented. In SQW-SCH laser diodes (LDs) with high optical confinement the optical power densities at the mirrors are very high, leading at some power level to so-called catastrophic optical damage (COD) of the mirrors (and lasers). Thus the COD level limits the LD’s optical output and to improve it, mirrors are usually protected with dielectric coatings, such as SiO2, Si3N4 and Al2O3 layers. Here, the AIN layers are proposed as a LD mirror coatings because of their unique features including high smoothness and thermal conductivity (3.19 Wcm-1K-1) which is close to that of copper (4.01 Wcm-1K-1). Moreover thermal expansion coefficient of AIN matches well coefficient of GaAs. Single AIN layers (approx. λ/4 thick) have been deposited as front, low reflectivity LD coatings and for the rear, high reflectivity mirrors the AIN-Si λ/4 layer stacks (4 pairs) have been used. LDs with such coatings exhibit twofold external quantum efficiency and good stability during CW life test.

Paper Details

Date Published: 8 July 2003
PDF: 6 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498253
Show Author Affiliations
A. Jagoda, Institute of Electronic Materials Technology (Poland)
Lech Dobrzanski, Institute of Electronic Materials Technology (Poland)
Andrzej Malag, Institute of Electronic Materials Technology (Poland)
B. Stanczyk, Institute of Electronic Materials Technology (Poland)
Sylwia Wrobel, Institute of Electronic Materials Technology (Poland)
A. E. Kowalczyk, Institute of Electronic Materials Technology (Poland)

Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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