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Proceedings Paper

2-W high-brightness semiconductor lasers with Bragg-grating filtering
Author(s): Katrin Paschke; Reiner Guether; Joerg Fricke; Juergen Sebastian; Goetz Erbert; Guenther Traenkle
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Paper Abstract

We present angled-grating distributed feedback lasers (α-DFB lasers) with high beam quality and high output power of several Watts at the wavelength λ = 1060 nm. The spatial and spectral single mode emission of such lasers is achieved by a filtering mechanism due to repeated Bragg reflections at an angled grating. The influence of slant angle, coupling coefficient, electrode stripe width, length of the resonator, vertical wave guide structure, and facet coating were studied. For optimized structures we obtained a nearly diffraction limited beam with an output power of more than 1 W, a lateral far field divergence angle of 0.3°, a beam quality factor M2 = 1.1 (M2 = 3.2 @ 2.1 W), and a spectral line width less than 5.8 pm with 28 dB side mode suppression ratio.

Paper Details

Date Published: 8 July 2003
PDF: 8 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498241
Show Author Affiliations
Katrin Paschke, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Reiner Guether, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Joerg Fricke, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Juergen Sebastian, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Goetz Erbert, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Guenther Traenkle, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)

Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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