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Proceedings Paper

Computer simulation and reverse engineering of trap-assisted generation-recombination noise in advanced silicon MOSFETs
Author(s): Gijs Bosman; Fan-Chi Hou; Derek O. Martin; Juan E Sanchez
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Paper Abstract

Trap assisted generation-recombination noise spectra of advanced n-channel MOSFETs are numerically simulated using the drift-diffusion transport model and focusing on the bimolecular electron transitions between the channel and gate oxide. Good agreement between measured and simulated data is observed in both the linear and saturated regime of operation under sub-threshold and inversion conditions. Reverse engineering of the measured noise data reveals the discrete trap distributions in the oxide responsible for the observed spectra.

Paper Details

Date Published: 12 May 2003
PDF: 5 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.497127
Show Author Affiliations
Gijs Bosman, Univ. of Florida (United States)
Fan-Chi Hou, Univ. of Florida (United States)
Derek O. Martin, Univ. of Florida (United States)
Juan E Sanchez, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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