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Proceedings Paper

Current 1/f fluctuations in equilibrium semiconductor
Author(s): Slavik V. Melkonyan
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Paper Abstract

The current internal fluctuations appearing in the homogeneous, unlimited and non-degenerate semiconductors having parabolic band structure are investigated. At the considered case the external electric field is absent and the semiconductor is in thermal equilibrium state. For the definiteness only the behavior of the conduction electron system is considered. It is shown that equilibrium fluctuations of the electron current, conditioned by the fluctuations of the electron quasi-momentum, are describing by fluctuations of the asymmetric component of the electron distribution function. The following mechanism of these fluctuations is suggested. During the random phonon-phonon scattering the fluctuations of the quasi-momentum of acoustic phonons are coming into existence, which are transmitting to the electron system via electron-phonon interactions. On the base of this mechanism, the spectral density of the electron current equilibrium fluctuations SI(ω) is calculated. It is shown that SIconst in the frequency range ω < ω0. In the frequency range ω>0 < ω < ω1, frequency dependence of spectrum SI(ω) described by 1/ω law, and in the range ω > ω1 it is described by 1/ω2 law. The characteristic frequencies ω1 and ω0 are determined by parameters of semiconductors being under investigation as well as by processes of scattering and diffusion of electrons and phonons in quasi-momentum space.

Paper Details

Date Published: 8 May 2003
PDF: 8 pages
Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.490202
Show Author Affiliations
Slavik V. Melkonyan, Yerevan State Univ. (Armenia)

Published in SPIE Proceedings Vol. 5115:
Noise and Information in Nanoelectronics, Sensors, and Standards
Laszlo B. Kish; Frederick Green; Giuseppe Iannaccone; John R. Vig, Editor(s)

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