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Proceedings Paper

Selective metal deposition using low-dose focused ion-beam patterning
Author(s): Randall L. Kubena; Fred P. Stratton; Thomas M. Mayer
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Paper Abstract

In situ processing is rapidly becoming a reality with the development of vacuum compatible growth doping etching and deposition techniques. Focused ion beam (FIB) technology may play a critical role in this field since it offers a wide range of new maskiess processing techniques. Selective three - dimensional doping micromachining of optical structures and organometallic deposition have been demonstrated using a variety of FIB systems. However previous localized deposition procedures using FIB''s have suffered from high levels of impurity contamination and low writing speeds. Typically the impurity levels in Al W or Au deposits have been much greater than 20 and ion doses of 1017 to 1018/cm2 have been required. While these characteristics are acceptable for optical or x-ray mask repair a more sensitive and higher purity process is desirable for circuit reconfiguration and in situ fabrication. Previous FIB deposition techniques have relied on ion-induced decomposition processes that occur when an adlayer is bombarded with a beam of ions. Since the decomposition products have generally had low volatility and therefore have remained on the surface the resulting deposits have contained high percentages of carbon and oxygen. In addition the atomic yields (atoms deposited per incident ion) have been extremely low ranging from 1 to 100. Thus it is believed that collisions between secondary electrons produced near the surface by the primary ions and the surface gas molecules are responsible for the

Paper Details

Date Published: 1 March 1991
PDF: 3 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48964
Show Author Affiliations
Randall L. Kubena, Hughes Research Labs. (United States)
Fred P. Stratton, Hughes Research Labs. (United States)
Thomas M. Mayer, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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