Share Email Print
cover

Proceedings Paper

Improvement in dry etching of tungsten features
Author(s): Michel Heitzmann; Philippe Laporte; Evelyne Tabouret
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The etching of tungsten can be achieved using chlorine or fluorine chemistries. In both cases the selectivity between tungsten and photoresist mask is very low and leads to a slopped etching with a poor C. D. control. So we developped a new process using an intermediate inorganic mask with a chlorine chemistry. The optimisation was carried out using an ECHIP experimental design. In the best conditions a CD control better than O. 1 was achieved with a smoothed tungsten layer 1 thick.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48922
Show Author Affiliations
Michel Heitzmann, Commissariat a l'Energie Atomique (France)
Philippe Laporte, Commissariat a l'Energie Atomique (France)
Evelyne Tabouret, Commissariat a l'Energie Atomique (France)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray