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Proceedings Paper

Improvement in dry etching of tungsten features
Author(s): Michel Heitzmann; Philippe Laporte; Evelyne Tabouret
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Paper Abstract

The etching of tungsten can be achieved using chlorine or fluorine chemistries. In both cases the selectivity between tungsten and photoresist mask is very low and leads to a slopped etching with a poor C. D. control. So we developped a new process using an intermediate inorganic mask with a chlorine chemistry. The optimisation was carried out using an ECHIP experimental design. In the best conditions a CD control better than O. 1 was achieved with a smoothed tungsten layer 1 thick.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48922
Show Author Affiliations
Michel Heitzmann, Commissariat a l'Energie Atomique (France)
Philippe Laporte, Commissariat a l'Energie Atomique (France)
Evelyne Tabouret, Commissariat a l'Energie Atomique (France)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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