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Proceedings Paper

Dry etching of high-aspect ratio contact holes
Author(s): Mark Wiepking; M. LeVan; Phyllis Mayo
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Paper Abstract

Patterning of highaspect ratio contact holes is required for 0. 5/ira technologies. High selectivity and anisotropic wall profiles are necessary for a successful process since large percentage overetches are required for planarized dielectric layers. This paper will discuss work in patterning high aspect ratio contact hole patterns using a Drytek 384T TRIODE etching system. The etching of O. 6/nn by l/nn and O. 6jnn by 2/sm contact hole structures has been investigated. Discussion of process variables which control anisotropic wall profiles will be presented.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48909
Show Author Affiliations
Mark Wiepking, Drytek/General Signal (United States)
M. LeVan, Drytek/General Signal (United States)
Phyllis Mayo, Drytek/General Signal (United States)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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