We have measured the back channel low frequency noise of 0.6um*2.3um SOI nMOS transistors with a buried oxide thickness of 170 nm as a function of frequency (f), back gate bias (Vbg ), and temperature (T). For a temperature range of, noise measurements were performed at frequencies of, with top gate grounded and Vbg-Vbgth=4V, where Vbgth is the back gate threshold voltage. After zero-bias X-ray irradiation, the noise power increases, in agreement with previous work on the noise response of bulk MOSFETs. The temperature and frequency dependences of the 1/f noise of back channel SOI nMOS transistors shows thermally-activated charge exchange between the Si channel and defects in the buried oxide. Comparison is made with the Dutta and Horn model of 1/f noise. Devices on one particular wafer appear to show a mixture of 1/f noise and noise due to diffusion of a hydrogen-related species.

Date Published: 12 May 2003
PDF: 12 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.487870

Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)