We demonstrate the integration of microscopic gain calculation into the laser design tool LaserMOD, which is derived from the Minilase II simulator. A microscopic many body theory of the semiconductor allows for the accurate modeling of the spectral characteristics of the material gain. With such a model, the energetic position of the gain peak, the collision broadening, and therefore, the absolute magnitude of the gain can be predicted based solely on material parameters [2]. In contrast, many simpler approaches rely on careful calibration of model parameters requiring additional effort due to fabrication of samples and experimental studies. In our full scale laser simulation multi dimensional carrier transport, interaction with the optical field via stimulated and spontaneous emission, as well as the optical field itself is computed self consistently. We demonstrate our approach on an example of a Fabry-Perot laser structure with GaInAsP multiple quantum wells for 1.55 μm emission wavelength.

Date Published: 25 July 2003
PDF: 10 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.487809

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)