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Proceedings Paper

CD-SEM image acquisition effects on 193-nm resist line slimming
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Paper Abstract

ArF resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193nm resists. Previous studies have demonstrated the primary effect of electron landing energy on ArF resist line slimming; this work examines the influence of acquisition time, beam blanking, probe current and measurement magnification. This work will demonstrate, in concurrence with other research, that reducing landing energy remains the most effective method for minimizing line slimming of ArF resist under electron beam exposure. However, the other parameters studied can also affect the magnitude of line slimming. This becomes especially important for line edge roughness (LER) measurements which require a greater total dose be imparted to the sample to maintain measurement precision. Control over all acquisition parameters is essential to achieve accurate and repeatable LER measurements.

Paper Details

Date Published: 2 June 2003
PDF: 6 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.487604
Show Author Affiliations
Neal T. Sullivan, Schlumberger Ltd. (United States)
Martin E. Mastovich, Schlumberger Ltd. (United States)
Scott Bowdoin, Schlumberger Ltd. (United States)
Robert Brandom, Schlumberger Ltd. (United States)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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