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Proceedings Paper

640 x 480 MOS PtSi IR sensor
Author(s): Donald J. Sauer; Frank V. Shallcross; Fu-Lung Hseuh; Grazyna M. Meray; Peter A. Levine; Harvey R. Gilmartin; Thomas S. Villani; Benjamin J. Esposito; John R. Tower
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Paper Abstract

The design of a 1st and 2nd generation 640(H) X 480(V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. Measured performance characteristics for Gen 1 devices are presented along with calculated performance for the Gen 2 design. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non- interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS170 operation) resulting in a form of 'electronic shutter,' or variable exposure control. The pixel size of 24-micrometers X 24-micrometers results in a fill factor of 38% for 1.5-micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.

Paper Details

Date Published: 1 December 1991
PDF: 12 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48745
Show Author Affiliations
Donald J. Sauer, David Sarnoff Research Ctr. (United States)
Frank V. Shallcross, David Sarnoff Research Ctr. (United States)
Fu-Lung Hseuh, David Sarnoff Research Ctr. (United States)
Grazyna M. Meray, David Sarnoff Research Ctr. (United States)
Peter A. Levine, David Sarnoff Research Ctr. (United States)
Harvey R. Gilmartin, David Sarnoff Research Ctr. (United States)
Thomas S. Villani, David Sarnoff Research Ctr. (United States)
Benjamin J. Esposito, David Sarnoff Research Ctr. (United States)
John R. Tower, David Sarnoff Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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