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Proceedings Paper

Long-wavelength GaAs/AlxGa1-xAs quantum-well infrared photodetectors
Author(s): Barry F. Levine; Clyde G. Bethea; J. W. Stayt Jr.; Kenneth G. Glogovsky; Ronald E. Leibenguth; Sarath D. Gunapala; Shin-Shern Pei; Jenn-Ming Kuo
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Paper Abstract

We discuss the physics and 128 X 128 array imaging performance of GaAs/AlxGa1-xAs n-doped quantum well infrared photodetectors (QWIPs). The device physics of novel p-doped QWIPs which respond to normal incidence radiation of also presented.

Paper Details

Date Published: 1 December 1991
PDF: 6 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48742
Show Author Affiliations
Barry F. Levine, AT&T Bell Labs. (United States)
Clyde G. Bethea, AT&T Bell Labs. (United States)
J. W. Stayt Jr., AT&T Bell Labs. (United States)
Kenneth G. Glogovsky, AT&T Bell Labs. (United States)
Ronald E. Leibenguth, AT&T Bell Labs. (United States)
Sarath D. Gunapala, AT&T Bell Labs. (United States)
Shin-Shern Pei, AT&T Bell Labs. (United States)
Jenn-Ming Kuo, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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