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Proceedings Paper

An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K
Author(s): Lin Jiang; Sheng S. Li; Nien-Tze Yeh; Jen-Inn Chyi
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Paper Abstract

A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection waveband in 6.7 to approximately 11.5 μm and operating temperature up to 260K under normal incident illumination has been demonstrated. The peak detection wavelength shifts from 7.6 μm to 8.4 μm when the temperature rises from 40 to 260K. The background limited performance (BLIP) detectivity (D*BLIP) measured at Vb=1.5 V, T=77K and λp = 7.6 μm was found to be 1.25 x 1010 cm-Hz1/2/W, with a corresponding responsivity of 0.22A/W. The high operating temperature is attributed to the very low dark current and long carrier lifetime in the quantum dots of this device. The results show that this QDIP can operate at high temperature without using the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current.

Paper Details

Date Published: 10 October 2003
PDF: 8 pages
Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.487034
Show Author Affiliations
Lin Jiang, Univ. of Florida (United States)
Sheng S. Li, Univ. of Florida (United States)
Nien-Tze Yeh, National Central Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5074:
Infrared Technology and Applications XXIX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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