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Proceedings Paper

Refractive index of SiO2 thin films deposited by pulsed-laser deposition with silicone targets for fabricating waveguide devices
Author(s): Masayuki Okoshi; Masaaki Kuramatsu; Hiromitsu Takao; Narumi Inoue
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Paper Abstract

We deposited SiO2 films with different refractive indices by pulsed laser deposition with silicone targets. The deposition rate could control the refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. The origin of the refractive index changes was to be film porosity changes, which was observed by surface profile meter. The deposited films were free of impurities such as OH and carbon. Thus, a 0.4- μm-thick SiO2 cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of Si wafer, and then a 1- μm-thick SiO2 core film at 0.05 nm/pulse was fabricated in a line on the sample. Again, the sample was coated with a 0.1- μm-thick film at 0.1 nm/pulse. The sample functioned as an optical waveguide for a 633-nm line of He-Ne laser.

Paper Details

Date Published: 19 February 2003
PDF: 5 pages
Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486575
Show Author Affiliations
Masayuki Okoshi, National Defense Academy (Japan)
Masaaki Kuramatsu, National Defense Academy (Japan)
Hiromitsu Takao, National Defense Academy (Japan)
Narumi Inoue, National Defense Academy (Japan)

Published in SPIE Proceedings Vol. 4830:
Third International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Kojiro F. Kobayashi; Koji Sugioka; Reinhart Poprawe; Henry Helvajian, Editor(s)

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