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Proceedings Paper

Advanced HgCdTe focal plane arrays
Author(s): Muren Chu; Hrayr K. Gurgenian; Shoghig Mesropian; Sevag Terterian; C.C. Wang; J. D. Benson; Jack H. Dinan; Latika S. R. Becker
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Paper Abstract

Boron implantation and heterojunction epitaxy have been the standard techniques for the production of HgCdTe focal plane arrays for a variety of applications. Each of these techniques has its special advantageous features. In this paper, we will describe an advanced HgCdTe junction formation technique, the planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques. HgCdTe arrays in the format of 320x256 and 640x512 have been produced by this method. The characteristics of these arrays are reported.

Paper Details

Date Published: 10 October 2003
PDF: 8 pages
Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.485908
Show Author Affiliations
Muren Chu, Fermionics Corp. (United States)
Hrayr K. Gurgenian, Fermionics Corp. (United States)
Shoghig Mesropian, Fermionics Corp. (United States)
Sevag Terterian, Fermionics Corp. (United States)
C.C. Wang, Fermionics Corp. (United States)
J. D. Benson, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Jack H. Dinan, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Latika S. R. Becker, U.S. Army Space and Missile Defense Command (United States)

Published in SPIE Proceedings Vol. 5074:
Infrared Technology and Applications XXIX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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