Share Email Print

Proceedings Paper

Simulation of sub-90-nm node complementary phase-shift processes with ArF lithography
Author(s): Mosong Cheng; Benjamin C. P. Ho; Kathleen Nafus
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper investigate the resolution and process latitude of printing 90nm node via complementary phase-shift mask process in 193nm ArF lithography. A physical image-in-resist model is presented to simulate the through-does and through-focus variation of light intensity due to double exposure process. The exposure doses are optimized so as to minimize the through-pitch CD variation. The optimal PSM:BIM exposure dose ratio is found to be 68:32. Then the process latitude (PL) at different pitches is calculated under the assumption of perfect lens and no misalignment. The 200nm and over 400nm pitches have enough PL while forbidden pitches, 250-350nm, are not printable. The lens aberrations severely reduce the PL of 200nm pitch but has insignificant effect on isolated features. Misalignment has little impact on CD if pitch is more than 350nm, which is believed to be due to the optimal dose setup. But to maintain the printability of 200nm pitch, misalignment should be less than 10nm if aberrations exist. The pattern placement error is found to be a linear function of misalignment, and the coefficient of this function depends on pitch and is 0.1-0.3. The through-pitch CD variations are also analyzed and OPC is needed to address this issue. Finally the potential solutions to sub-90nm nodes are discussed.

Paper Details

Date Published: 26 June 2003
PDF: 10 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485443
Show Author Affiliations
Mosong Cheng, Texas A&M Univ. (United States)
Benjamin C. P. Ho, Tokyo Electron Texas LLC (United States)
Kathleen Nafus, Tokyo Electron Texas LLC (United States)

Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top