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Proceedings Paper

Critical evaluation of photomask needs for competing 65-nm node RET options
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Paper Abstract

A comprehensive set of numerical, mask pattern operators is developed and applied for the purpose of understanding photomask fabrication tolerances supporting aggressive, optical lithography resolution enhancement. Using these numerical operators, the content and fidelity of the photomask is systematically degraded and wafer level results predicted using experimentally calibrated simulation. The concept of a mask sensitivity matrix is introduced and used as a bridge to full Monte Carlo analysis of photomask fabrication errors. A statistical approach to analyze mask defect tolerances for resolution enhancement options is presented within the same numerical framework. Such methodical and detailed analysis of mask construction parameters is a vital step toward understanding the complex interaction between mask quality and printed image and hence the delivery of 65 nm node lithography capability.

Paper Details

Date Published: 26 June 2003
PDF: 11 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485439
Show Author Affiliations
Christopher J. Progler, Photronics Inc. (United States)
Guangming Xiao, Photronics Inc. (United States)

Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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