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Proceedings Paper

Impact of scanner illumination mode on CD control process margin
Author(s): Shangting F. Detweiler; Sandra Zheng; Mark A. Boehm
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Paper Abstract

Conventional and annular illumination modes for a 248 nm DUV scanner will be discussed in this paper for their advantage and drawbacks in critical dimension (CD) control. This includes proximity of line width through pitch size, marginality of resist profile measured as sidewall angle, depth of focus (DOF) in line width variation across field/wafer, and isolated space resolution, supported by SEM and scatterometer metrology. Both illumination modes have been applied in the current technology node with sub-wavelength CD, variable pitch sizes, optical proximity correction (OPC) for resolution enhancement and process control optimization. Each illumination defines process margin in exposure, focus and CD uniformity, to gain capability with improved CD control.

Paper Details

Date Published: 26 June 2003
PDF: 9 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485429
Show Author Affiliations
Shangting F. Detweiler, Texas Instruments Inc. (United States)
Sandra Zheng, Texas Instruments Inc. (United States)
Mark A. Boehm, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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