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Proceedings Paper

Robust lithography application to prevent resist poisoning in BEOL
Author(s): Satoru Shimura; Tetsu Kawasaki; Mitsuaki Iwashita
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Paper Abstract

As feature sizes become increasingly smaller in integrated circuits, the occurrence of resist-pattern defects (resist poisoning) has become a serious problem in Back End Of Line (BEOL) Dual Damascene (DD) processing. Against this background, we have researched a bi-layer silylation process as one type of multi-layer process and evaluated its effectiveness as a countermeasure to resist poisoning. In the bi-layer silylation process, two layers of chemically amplified resist (CAR) are formed on novolac, and after wet-developing the upper CAR layer by an alkali developer, a silylation reaction is generated to make the resist pattern resistant to O2 reactive ion etching (RIE). We found that the bi-layer silylation process was an effective countermeasure to resist poisoning in a methylsilsesquioxane (MSQ) DD structure with a 160-nm via, and that a 160-nm MSQ DD structure could be formed. We also found that the occurrence of resist poisoning depended greatly on the surface conditions of the via structure and on the resist-ashing technique.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485189
Show Author Affiliations
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Tetsu Kawasaki, Tokyo Electron Kyushu Ltd. (Japan)
Mitsuaki Iwashita, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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