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Proceedings Paper

Effects of quencher ability on profile in chemically amplified resist system
Author(s): Deogbae Kim; Hyun-Jin Kim; Sook-Hee Cho; Dong-Hwal Lee; Kwang-Hyi Im; Min-Ja Yoo; Sang-Hyang Lee; Jaehyun Kim; Jin-Soo Kim; Hyeong-Soo Kim
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Paper Abstract

Recently, KrF lithography has extended to 100nm technical node using various techniques and pushed ArF lithography to sub-100nm application. To enhance resolution, there are many problems to be solved, like dark erosion (dark film loss), sloped profile, line edge roughness (LER), and so on. Also, thin resist film must be used to prevent pattern collapse. In general, the aspect ratio is less than 2.5 for sub 100nm. For this reason, chemically amplified resist has to get high etch resistance, low dark film loss and vertical profile shape at maximum resolution. Many efforts have been made to solve these problems and to improve resist performance. In this study, we tried to resolve some of these problems using various acid-quenching systems. We estimated the quencher ability using acid diffusion depth in resist film by sandwich method and pKb values of amines. The changes of lithographic properties according to the application of different amines were investigated. It was found that acid-quenching ability of an amine was not related to its basicity from sandwich experiment results. In fact, quenching efficiency was more closely related to the amine molecular structure and bulkiness of a substituent attached to nitrogen atom. We observed that pattern shape and process margin were not directly related to the basicity of an amine, but more related to quenching efficiency. The amines having higher quenching ability show wider process margin. However, other lithographic properties such as LER and dark erosion were not affected by acid-quenching ability. It is believed that they are determined by other components including polymer, protection groups, and PAGs.

Paper Details

Date Published: 12 June 2003
PDF: 12 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485161
Show Author Affiliations
Deogbae Kim, Dongjin Semichem Co., Ltd. (South Korea)
Hyun-Jin Kim, Dongin Semichem Co., Ltd. (South Korea)
Sook-Hee Cho, Dongjin Semichem Co., Ltd. (South Korea)
Dong-Hwal Lee, Dongjin Semichem Co., Ltd. (South Korea)
Kwang-Hyi Im, Dongjin Semichem Co., Ltd. (South Korea)
Min-Ja Yoo, Dongjin Semichem Co., Ltd (South Korea)
Sang-Hyang Lee, Dongjin Semichem Co., Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem Co., Ltd (South Korea)
Jin-Soo Kim, Hynix Semiconductor, Inc. (South Korea)
Hyeong-Soo Kim, Hynix Semiconductor, Inc. (South Korea)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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