Share Email Print

Proceedings Paper

Evaluation of process-based resolution enhancement techniques to extend 193-nm lithography
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This article addresses the evaluation of non-conventional approaches to pattern smaller contacts than those obtained through standard 193nm lithography. The 2002 update of the ITRS Roadmap specifies 100nm and 110nm contacts in resist for DRAMs and ASICs respectively at the 90nm node. The depth of focus (DOF) for small contacts with the current 193nm exposure tools is not adequate and according to Raleigh’s equation, the higher numerical aperture (NA) 193nm exposure tools can be expected to have further decreased DOF. Therefore it is important to investigate the capabilities of process based resolution enhancement techniques to print smaller contacts using the current 193nm exposure tools. This article presents an evaluation of proves based resolution enhancement techniques such as REFLOW, RELACS and SAFIER.

Paper Details

Date Published: 12 June 2003
PDF: 12 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485156
Show Author Affiliations
Sripadma Satyanarayana, International SEMATECH (United States)
Chris L. Cohan, International SEMATECH (United States)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?