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Proceedings Paper

High-sensitivity nanocomposite resist materials for x-ray and EUV lithography
Author(s): Mohammad Azam Ali; Kenneth E. Gonsalves; N. Batina; Victoria Golovkina; Franco Cerrina
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Paper Abstract

Novel positive nanocomposite photoresists for X-ray lithography (XRL) and Extreme Ultraviolet lithography (EUVL) have been developed. In this work, resists containing acrylate monomers, organic-inorganic hybrid nanoparticles and a photo acid generator (PAG) were prepared by varying the compositions of the components. It was observed that the nanophotoresists were suitable for XRL and EUVL. The new resists exhibit all characteristics for NGL viz. defect free thin film formation <100 nm and show high sensitivity (1.0 - 1.2 mJ/cm2) and contrast (γ=4.9). This significant increase in sensitivity should lead to an enormous cost reduction of the XRL and EUVL processes as well as high-resolution sub-100 nm features.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485139
Show Author Affiliations
Mohammad Azam Ali, Univ. of North Carolina/Charlotte (United States)
Kenneth E. Gonsalves, Univ. of North Carolina/Charlotte (United States)
N. Batina, Univ. Autonoma Metropolitana Iztapalapa (Mexico)
Victoria Golovkina, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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