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Proceedings Paper

Challenges of processing thick and ultrathick photoresist films
Author(s): Mike Kubenz; Ute Ostrzinski; Freimut Reuther; Gabi Gruetzner
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Paper Abstract

High viscous photoresists are required for the MEMS and MOEMS technology. Processing of thick and ultra-thick resist films is a challenging task. In this paper, procedures are presented to attain improved patterning results. Baking by infra-red radiation (IR baking) is described as an effective approach for effectively drying thick and ultra-thick resist layers. Patterning results are shown to confirm the performance and benefits of IR baking. Examples of up to 60μm thick layers of two positive tone resists, ma-P 100 and ma-P 1275 (micro resist technology GmbH, Germany), and up to 500 μm layers of chemically amplified negative tone photoresist SU-8 (MicroChem Newton, MA) are presented. IR baking allows reduced process time and lower bake temperature enabling high aspect ratio and low stress SU-8 layers.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485084
Show Author Affiliations
Mike Kubenz, micro resist technology GmbH (Germany)
Ute Ostrzinski, micro resist technology GmbH (Germany)
Freimut Reuther, micro resist technology GmbH (Germany)
Gabi Gruetzner, micro resist technology GmbH (Germany)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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