High viscous photoresists are required for the MEMS and MOEMS technology. Processing of thick and ultra-thick resist films is a challenging task. In this paper, procedures are presented to attain improved patterning results. Baking by infra-red radiation (IR baking) is described as an effective approach for effectively drying thick and ultra-thick resist layers. Patterning results are shown to confirm the performance and benefits of IR baking. Examples of up to 60μm thick layers of two positive tone resists, ma-P 100 and ma-P 1275 (micro resist technology GmbH, Germany), and up to 500 μm layers of chemically amplified negative tone photoresist SU-8 (MicroChem Newton, MA) are presented. IR baking allows reduced process time and lower bake temperature enabling high aspect ratio and low stress SU-8 layers.

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485084

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)