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Proceedings Paper

Thin film type 248-nm bottom antireflective coatings
Author(s): Tomoyuki Enomoto; Keisuke Nakayama; Kenichi Mizusawa; Yasuyuki Nakajima; Sangwoong Yoon; Yong-Hoon Kim; Young-Ho Kim; Hoesik Chung; Sang Mun Chon
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Paper Abstract

A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the substrate. One approach to reduce the light reflection is the use of bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer. The BARC technology has been utilized for a few years to minimize the reflectivity. As the chip size is reduced to sub 0.13-micron, the photoresist thickness has to decrease with the aspect ratio being less than 3.0. Therefore, new Organic BARC is strongly required which has the minimum reflectivity with thinner BARC thickness and higher etch selectivity towards resist. SAMSUNG Electronics has developed the advanced Organic BARC with Nissan Chemical Industries, Ltd. and Brewer Science, Inc. for achieving the above purpose. As a result, the suitable high performance SNAC2002 series KrF Organic BARCs were developed. Using CF4 gas as etchant, the plasma etch rate of SNAC2002 series is about 1.4 times higher than that of conventional KrF resists and 1.25 times higher than the existing product. The SNAC2002 series can minimize the substrate reflectivity at below 40nm BARC thickness, shows excellent litho performance and coating properties.

Paper Details

Date Published: 12 June 2003
PDF: 10 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485060
Show Author Affiliations
Tomoyuki Enomoto, Nissan Chemical Industries, Ltd. (Japan)
Keisuke Nakayama, Nissan Chemical Industries, Ltd. (Japan)
Kenichi Mizusawa, Nissan Chemical Industries, Ltd. (Japan)
Yasuyuki Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Sangwoong Yoon, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Young-Ho Kim, Samsung Electronics Co., Ltd. (North Korea)
Hoesik Chung, Samsung Electronics Co., Ltd. (South Korea)
Sang Mun Chon, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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