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Proceedings Paper

Performances of resists for 157-nm lithography based on monocyclic fluoropolymers
Author(s): Seiichi Ishikawa; Shigeo Irie; Toshiro Itani; Yasuhide Kawaguchi; Osamu Yokokoji; Shun-ichi Kodama
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Paper Abstract

Fluoropolymers are key materials for the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential for use as the base resin and have developed a monocyclic fluorinated polymer with a blocking group of Cyclohexylcyclohexyloxymethyl (CCOM) that has high transmittance (an absorption coefficient of 0.64 μm-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate of 1.75 times that of KrF resist) under organic bottom anti-reflective coating/hard mark dry-etching conditions. A resist based on our monocyclic fluoropolymer had high sensitivity. Using it, we were able to resolve a 60-nm line-and-space pattern using a 157-nm laser microstepper (numerical aperture = 0.85) with a resolution enhanced technology of an alternating phase-shifting mask. This polymer was demonstrated to simultaneously enable high transparency, high dry-etching resistance, and good imaging performance.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485051
Show Author Affiliations
Seiichi Ishikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shigeo Irie, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasuhide Kawaguchi, Asahi Glass Co., Ltd. (Japan)
Osamu Yokokoji, Asahi Glass Co., Ltd. (Japan)
Shun-ichi Kodama, Asahi Glass Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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