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Proceedings Paper

Molecular weight effect on line-edge roughness
Author(s): Toru Yamaguchi; Kenji Yamazaki; Hideo Namatsu
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Paper Abstract

The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions. This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485049
Show Author Affiliations
Toru Yamaguchi, NTT Basic Research Labs. (Japan)
Kenji Yamazaki, NTT Basic Research Labs. (Japan)
Hideo Namatsu, NTT Basic Research Labs. (Japan)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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