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Proceedings Paper

Simulation of complex resist pattern collapse with mechanical modeling
Author(s): Hyung-Joo Lee; Jun-Taek Park; Yeong-Keun Kwon; Hye-Keun Oh
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Paper Abstract

High aspect ration resist patterns with dimensions below 100 nm often bend, break or tear. These phenomena are generically called “resist pattern collapse”. Pattern collapse is a very serious problem in fine patterning of less than 100 nm critical dimension (CD), so that it decreases the yield. In order to mechanically analyze this phenomenon and create its simulator, two models have been made and compared. In this paper, various approaches with various analyses are made to understand pattern collapse. Also, the critical aspect ratio for 100 nm node, that determines whether pattern collapse happens or not, can be calculated with these approaches. Finally tear type caused by insufficiency of adhesion strength between the substrate and the resist is analyzed with a point of view of the surface free energy.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485048
Show Author Affiliations
Hyung-Joo Lee, Hanyang Univ. (South Korea)
Jun-Taek Park, Hanyang Univ. (South Korea)
Yeong-Keun Kwon, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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