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Proceedings Paper

Determination of lithography process control metrics by spectroscopic scatterometry
Author(s): Eric B Maiken; G. Raghavendra; Carmen Morales; Bryan Choo
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Paper Abstract

Spectroscopic Scatterometry was employed for definition of control metrics for lithography process tool optimization. Normal incidence unpolarized reflectance data was acquired in active device regions on resist gratings that defined the first gate level for the core array of a flash memory circuit. Calculations of the interactions of incident boradband light with the scattering structures were perforemd utilizing both a database of pre-computed spectra as well as a real-time method. Results from both inversion techniques were highly correlated. Scatterometry-based CDs were also highly correlated with dimensions determiend by CD-SEM and the modeled profiles clsoely matched cross section SEM data. Test wafer sets were patterned both at uniform exposure and as focus-exposure matrices, and measured to determine resist critical dimensions and thicknesses. Process variations were tracked across fields, across wafers and over time. Analytical models were applied to the profile data to determine rpocess windows and to define optimal scanner settings.

Paper Details

Date Published: 2 June 2003
PDF: 10 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.485038
Show Author Affiliations
Eric B Maiken, Therma-Wave (United States)
G. Raghavendra, Therma-Wave (United States)
Carmen Morales, Advanced Micro Devices, Inc. (United States)
Bryan Choo, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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