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Proceedings Paper

Simulation of repairing thin-film phase defect in masks for EUV lithography
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Paper Abstract

Phase defects in extreme UV lithography masks made from Mo/Si multilayer thin films can be removed by heating the metal multilayer to produce a localized phase transition. The experimental situation has been simulated using a Monte Carlo method to determine the deposition of energy from the incident electrons, and the resultant elevation of temperature has been found by solving the thermal diffusion equation. The effects of operating parameters such as beam energy, beam current, and beam spot size have been investigated. It is shown that the effect of surface radiation cooling is negligible, and that only a steady state solution needs to be considered.

Paper Details

Date Published: 2 June 2003
PDF: 10 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.485014
Show Author Affiliations
Yeong-Uk Ko, Univ. of Tennessee/Knoxville (United States)
David C. Joy, Univ. of Tennessee/Knoxville (United States)
Oak Ridge National Lab. (United States)
Scott Daniel Hector, Motorola, Inc. (United States)
Bing Lu, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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