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Proceedings Paper

FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches
Author(s): Shoaib Hasan Zaidi; George Stojakovic; Alois Gutmann; Cornel Bozdog; Ulrich Mantz; Sylvie Bosch Charpenay; Peter A. Rosenthal
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Paper Abstract

A method that uses Fourier Transform Infrared (FTIR) Reflectance spectroscopy to determine the depths of poly silicon filled trenches is described. These trenches, which form the cells for trench DRAM, are arranged in arrays that are periodic in both directions. The method is non-contact and non-destructive. Large number of points per wafer can be easily measured to determine etch uniformity performance. Unlike cross section SEM based metrology, the wafer does not need to be cleaved, and thereby destroyed. The technique is thus suited for in-line metrology of product wafers. The FTIR technique was found t be very robust and provided excellent correlations with SEMs have been observed for 110 nm trenches and are reported in the paper. The method is a viable manufacturing solution for inline, non-destructive, rapid metrology on product wafers.

Paper Details

Date Published: 2 June 2003
PDF: 6 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.484998
Show Author Affiliations
Shoaib Hasan Zaidi, Infineon Technologies Corp. (United States)
George Stojakovic, Infineon Technologies Corp. (United States)
Alois Gutmann, Infineon Technologies Corp. (United States)
Cornel Bozdog, MKS Instruments Inc. (United States)
Ulrich Mantz, Infineon Technologies AG (Germany)
Sylvie Bosch Charpenay, MKS Instruments Inc. (United States)
Peter A. Rosenthal, MKS Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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