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Proceedings Paper

The Rayleigh method applied to EUV lithography simulation
Author(s): Maxime Besacier; Patrick Schiavone; Gerard Granet; Vincent Farys
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Paper Abstract

In Extreme Ultraviolet lithography, the electromagnetic modeling of the mask allows to determine the influence of the mask structure on the electromagnetic field. That makes it possible for example to analyze the influence of a defect within the multi-layer stack. This paper describes a modeling method of the EUV mask based on the Rayleigh assumptions1. These hypotheses lead to a more restrictive validity domain than rigorous methods like modal methods or Finite Difference Time Domain (FDTD), but is shown in this paper to be usable adapted for EUV mask simulation. Furthermore the simulations are less costly in memory resources and in computing time.

Paper Details

Date Published: 16 June 2003
PDF: 9 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484977
Show Author Affiliations
Maxime Besacier, LTM-CNRS (France)
Patrick Schiavone, LTM-CNRS (France)
Gerard Granet, LASMEA/Univ. Blaise Pascal (France)
Vincent Farys, LTM-CNRS (France)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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