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Proceedings Paper

Estimated impact of shot noise in extreme-ultraviolet lithography
Author(s): Jonathan L. Cobb; Frances A. Houle; Gregg M. Gallatin
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Paper Abstract

Through simulation we examine the predicted resist images for 50- and 80-nm contacts in the presence of three sources of fluctuations: those associated with random photon absorption sites, those associated with dose statistics, and those associated with resist chemistry. Photon absorption simulations were done using simple optics theory or Monte Carlo techniques. These absorption maps were converted into an initial map of photoacid concentration and a realistic PEB model was used to obtain the developable latent image. A new dissolution model was used to estimate the final resist profile, and image analysis routines were used to extract the centroid position jitter, diameter fluctuations, and edge roughness statistics. The simulations show that each source of fluctuation can be significant, and we propose an experiment that will detect the presence of shot noise and partially separate the three fluctuation sources.

Paper Details

Date Published: 16 June 2003
PDF: 9 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484730
Show Author Affiliations
Jonathan L. Cobb, Motorola, Inc. (United States)
Frances A. Houle, IBM Almaden Research Ctr. (United States)
Gregg M. Gallatin, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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