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Proceedings Paper

Dry-etching resistance of fluoropolymers for 157-nm single-layer resists
Author(s): Yasuhide Kawaguchi; Jun Irisawa; Shun-ichi Kodama; Shinji Okada; Yoko Takebe; Isamu Kaneko; Osamu Yokokoji; Seiichi Ishikawa; Shigeo Irie; Takuya Hagiwara; Toshiro Itani
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Paper Abstract

Novel fluoropolymers having partially fluorinated monocyclic (5-membered and 6-membered ring) structure have been synthesized with radical cyclo-polymerization, which have C-F bond in the polymer main chain and also possess fluorocontaining acidic alcohol group. These polymers have excellent transparency lower than 1.0 μm-1 at 157nm wavelength, a small amount of outgassing, high sensitivity and good adhesion to the wafer. However, this fluoropolymer have lower etching resistance (half of conventional KrF resists) and it must be improved for applying to the single-layer resist. In this paper, we show the new model of the estimation of the dry-etching resistance for designing polymer compositions. It is well known that the model using carbon-atom-density as a parameter is useful for estimating dry-etching resistance. However, these models did not agree with the results of our fluoropolymers. Our new model was focused on the surface area and the volume of the polymer. We succeeded to explain the relationship between the dry-etching resistance and the composition of the fluoropolymer. According to this model, the compositions of fluoropolymer such as protective groups, protective ration and co-polymer units were optimized to improve their etching resistance.

Paper Details

Date Published: 12 June 2003
PDF: 10 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483735
Show Author Affiliations
Yasuhide Kawaguchi, Asahi Glass Co., Ltd. (Japan)
Jun Irisawa, Asahi Glass Co., Ltd. (Japan)
Shun-ichi Kodama, Asahi Glass Co., Ltd. (Japan)
Shinji Okada, Asahi Glass Co., Ltd. (Japan)
Yoko Takebe, Asahi Glass Co., Ltd. (Japan)
Isamu Kaneko, Asahi Glass Co., Ltd. (Japan)
Osamu Yokokoji, Asahi Glass Co., Ltd. (Japan)
Seiichi Ishikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shigeo Irie, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takuya Hagiwara, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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